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2N7002T
1.0
0.9
0.8
V GS = 10V
V GS = 7.0V
5
4
0.7
0.6
V GS = 6.0V
V GS = 5.0V
0.5
V GS = 4.0V
3
V GS = 3.0V
0.4
V GS = 4.0V
0.3
2
0.2
V GS = 3.0V
0.1
V GS = 5.0V
V GS = 6 .0V
V GS = 7 .0V
V GS = 10V
0
0
1
2
3
V GS = 2.5V
4
5
1
0
0.2
0.4
0.6
0.8
1.0
2.5
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
I D , DRAIN-SOURCE CURRENT (A)
Fig. 2 On-Resistance Variation with Gate Voltage
and Drain-Source Current
3.0
2.0
I D = 250μA
2.5
V GS = 10V
I D = 500mA
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0
-50
-25 0 25 50 75 100 125
T J , JUNCTION TEMPERATURE ( ° C)
150
0
-50
-25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE ( ° C)
60
50
40
Fig. 3 Gate Threshold Variation with Temperature
f = 1MHz
5.0
4.5
4.0
3.5
3.0
Fig. 4 On-Resistance Variation with Temperature
30
2.5
2.0
I D = 50mA
20
10
C iss
C oss
1.5
1.0
0.5
0
0
C rss
5 10 15 20 25
30
0
0
2
4 6 8
10
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Capacitance
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 6 On-Resistance vs. Gate-Source Voltage
2N7002T
Document number: DS30301 Rev. 14 - 2
3 of 5
www.diodes.com
April 2012
? Diodes Incorporated
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